FDMC86139P mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 67 mW at VGS = −10 V, ID = −4.4 A
* Max rDS(on) = 89 mW at VGS = −6 V, ID = −3.6 A
* Very Low RDS−On Mid Voltage P Channel Silicon Technology
.
as well as
Load Switch Applications
* 100% UIL Tested
* These Devices are Pb−Free and are RoHS Compliant
Applica.
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
Features
* Max rDS(on) = 67 .
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